PART |
Description |
Maker |
GS71116J-12I GS71116TP-12I GS71116TP-15I GS71116TP |
15ns 64K x 16 1Mb asynchronous SRAM 10ns 64K x 16 1Mb asynchronous SRAM 12ns 64K x 16 1Mb asynchronous SRAM
|
List of Unclassifed Manufacturers ETC[ETC] GSI Technology
|
GS71116ATP-8I |
8ns 64K x 16 1Mb asynchronous SRAM
|
GSI Technology
|
IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28 64K X 8 OTPROM, 90 ns, PDIP28 64K X 8 UVPROM, 55 ns, CDIP28 64K X 8 UVPROM, 90 ns, CDIP28 64K X 8 UVPROM, 70 ns, CDIP28 IC 集成电路 512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
ADVANCED MICRO DEVICES INC SPANSION LLC Rochester Electronics, LLC AMD
|
M27C1024-35C1 M27C1024-90C1 M27C1024-12C6 M27C1024 |
64K X 16 OTPROM, 100 ns, PDSO40 64K X 16 OTPROM, 100 ns, PQCC44 64K X 16 OTPROM, 100 ns, PDIP40 64K X 16 UVPROM, 100 ns, CDIP40 64K X 16 UVPROM, 45 ns, CDIP40 1 MBIT (64KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS ST Microelectronics
|
W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20 BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20 From old datasheet system
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100 3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100 3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
|
IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位) P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
IBM041813PPLB |
64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝发流水线式线式高性能静态RAM) 64K的X管道18的SRAM00万(64K的X 18)同步可猝发流水线式线式高性能静态内存)
|
International Business Machines, Corp.
|
CY7C1021B- CY7C1021B-15VC CY7C1021B-15ZC CY7C1021B |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
CY7C192-25PC |
64K x 4 Static RAM with Separate I/O 64K X 4 STANDARD SRAM, 25 ns, PDIP28
|
Cypress Semiconductor, Corp.
|
CY7C1021CV26-15ZE |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor, Corp.
|